aug . 201 5 . version 1. 2 magnachip semiconductor ltd . 1 mdv 3 6 0 5 C single p - channel trench mosfet absolute maximum ratings ( t a =25 o c unless otherwise noted ) characteristics symbol rating unit drain - source voltage v dss - 30 v gate - source voltage v gss 2 5 v continuous drain cu rrent (1) t c =25 o c (package limited) i d - 20.0 a t c =25 o c (silicon limited) - 29.0 t c = 70 o c (silicon limited) - 24.0 t a =25 o c - 10.8 (3) t a = 70 o c - 8.8 pulsed drain current i dm - 8 0.0 a power dissipation t c =25 o c p d 25.0 w t c = 70 o c 16 t a = 25 o c 3.4 (3) t a = 70 o c 2.2 single pulse avalanche energy (2) e as 60.5 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (note 1) r ja 36 o c /w thermal resistance, junction - to - case r j c 5.0 md v 3 6 0 5 single p - channel trench mosfet , - 30v, - 2 0 a, 18.0 m general description the md v 3 6 0 5 uses advanced magna c hips f eatures ? ds = - 3 0v ? d = - 2 0 a @v gs = - 10v ? ds(on) < 18.0 m gs = - 10v < 33 . 0 m gs = - 4.5 v applications ? ? ? p dfn 33 s s s g g s s s d d d d d d d d d g s g s
aug . 201 5 . version 1. 2 magnachip semiconductor ltd . 2 mdv 3 6 0 5 C single p - channel trench mosfet ordering information p art number temp. range package packing rohs status md v 36 0 5 u r h - 55~150 o c p dfn33 tape & reel halogen free electrical characteristics (t a = 25 o c unless otherwise noted) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = - 250a, v gs = 0v - 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = - 250a - 1 . 0 - 2.0 - 3 .0 drain cut - off current i dss v ds = - 30 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 2 5 v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = - 10 v, i d = - 8 a - 14.0 18.0 m v gs = - 5.0 v, i d = - 8 a 21.0 28.0 v gs = - 4.5 v, i d = - 8 a 25.0 33.0 for ward transconductance g fs v ds = - 5 v, i d = - 10 a 21.5 - s dynamic characteristics total gate charge q g v ds = - 15 v, i d = - 8 a v gs = - 10 v - 22.0 - nc gate - source charge q gs - 3.3 - gate - drain charge q gd - 4. 3 - input capacitance c iss v ds = - 15 v, v gs = 0v, f = 1.0mhz - 1035 - pf reverse transfer capacitance c rss - 150 - output capacitance c oss - 260 - gate resistance r g f = 1.0mhz - 6.4 - turn - on delay time t d(on) v gs = - 10 v , v d s = - 15 v, i d = - 8 a , r g en = 3 - 1 2.0 - ns turn - on rise time t r - 12.4 - turn - off delay time t d(off) - 52.1 - turn - off fall time t f - 8.9 - drain - source body diode characteristics source - dra in diode forward voltage v sd i s = - 1 a, v gs = 0v - - 0.71 - 1.0 v body diode reverse recovery time t rr i f = - 8 a, di/dt = 100a/ s - 30.8 ns body diode reverse recovery charge q rr - 26.4 - nc note : 1. surface mounted rf4 board with 2oz. copper. 2. st arting t j = 25 c , l=1 .0 mh, i as = - 11.0 a v dd = - 20 .0 v, v gs = - 10 .0 v. tested at i as = - 8 .5a. 3. t < 10sec
aug . 201 5 . version 1. 2 magnachip semiconductor ltd . 3 mdv 3 6 0 5 C single p - channel trench mosfet fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source volt age fig.6 body diode forward voltage variation with source current and temperature 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 45 50 v gs =-4.0v -8.0v -6.0v v gs =-3.0v v gs =-2.5v -10.0v -5.0v v gs =-3.5v -i d [a] -v ds [v] 0 10 20 30 40 0 5 10 15 20 25 30 35 40 v gs =-5v v gs =-10v r ds(on) [m? ] -i d [a] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 *note; i d =-8a v gs =-10v r ds(on) , (normalized) drain-source on-resistance [m? ] t j , junction temperature [ 2 3 4 5 6 7 8 9 10 5 10 15 20 25 30 35 40 *note ; i d =-8a r ds(on) [m ] -v gs [v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 * note ; v ds =-5v -i d [a] -v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 0 10 1 notes : v gs = 0v -i s , reverse drain current [a] -v sd , source-drain voltage [v]
aug . 201 5 . version 1. 2 magnachip semiconductor ltd . 4 mdv 3 6 0 5 C single p - channel trench mosfet fig.7 gate charge characte ristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current vs. ambient temperature fig.11 transient thermal response curve 0 5 10 15 20 25 30 0 300 600 900 1200 1500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] -v ds [v] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10s 100s 1s 100 ms dc 10 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 -i d [a] -v ds [v] 25 50 75 100 125 150 0 10 20 30 40 -i d [a] t c [ 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 * notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc , thermal response t 1 , rectangular pulse duration [s] 0 5 10 15 20 25 30 0 2 4 6 8 10 * note :v ds = -15v i d = -8a -v gs [v] -q g [nc]
aug . 201 5 . version 1. 2 magnachip semiconductor ltd . 5 mdv 3 6 0 5 C single p - channel trench mosfet package dimension powerdfn33 (3.3x3.3mm) d imensions are in millimeters, unless othe rwise specified
aug . 201 5 . version 1. 2 magnachip semiconductor ltd . 6 mdv 3 6 0 5 C single p - channel trench mosfet disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical applia nces, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defen d and indemnify seller . magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product . is a registered trademark of magnachip semiconductor ltd.
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